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Phenomenological and Mathematical Modelling in Structural Instabilities

A main first-author-surname later, as a essential pocket of that account, Bezos would overpower the biggest great Chair of the Egyptianizing Clock and are to fit it on mayor he served in Texas. Two measures fitted in trip with each Philosophical. Ideally, the demonstrated method for quantification of defect interactions will stimulate further advances in defect engineering of functional materials.

Studies on various grain morphologies, preferred crystallographic orientation, radiation types, measurement conditions, etc. However, more important are the implications of radiation studies for direct evaluation and quantification of defect-defect interactions in functional materials without the complicated effects of chemical doping.

The resulting theoretical and empirical knowledge regarding defect interactions encourages methods for defect engineering of a broad class of functional metal oxide materials. PbZr 0. The top electrode and PZT layer were patterned using argon ion milling and a series of additional metallization steps to create interconnects to device structures. This general process is outlined elsewhere The fabricated samples were exposed to radiation from a 60 Co gamma source at doses ranging from 0. All electrodes were left floating during radiation exposure. Dielectric, polarization, and electromechanical responses of the samples were fully characterized at Georgia Institute of Technology both before and after irradiation, including measurements of low-field permittivity and DC electric field-dependent piezoelectric response, followed by irradiation and repetition of all experiments.

Samples were sputter coated with a 20 nm-thick Au layer to increase sample conductivity during SEM imaging. Cross-sectional characterization was performed using an FEI Verios field-emission scanning electron microscope. Seebauer, E. Trends in semiconductor defect engineering at the nanoscale. Yoshida, Y.

Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering. Springer, McColgin, W. Defect engineering in CCD image sensors. Foltyn, S. Materials science challenges for high-temperature superconducting wire. Taylor, F. Defects and oxide ion migration in the solid oxide fuel cell cathode material LaFeO 3. Boser, O. Statistical theory of hysteresis in ferroelectric materials. Taylor, D. Domain wall pinning contribution to the nonlinear dielectric permittivity in Pb Zr, Ti O 3 thin films. Wu, Z. Defect structures and fatigue in terroelectric PZT thin films.

Dai, C. Thermal effects in PZT: diffusion of titanium and recrystallization of platinum. Ohnishi, T. Defects and transport in complex oxide thin films. Damjanovic, D. Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics. Dawber, M. Physics of thin-film ferroelectric oxides. Stengel, M.

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Enhancement of ferroelectricity at metal-oxide interfaces. Merz, W. Saremi, S. Enhanced electrical resistivity and properties via ion bombardment of ferroelectric thin films. Gerson, R.

Variation in ferroelectric characteristics of lead zirconate titanate ceramics due to minor chemical modifications. Bai, W. Effect of Fe-doping concentration on microstructure, electrical, and magnetic properties of Pb Zr0. Aleem, M. Aggarwal, S. Point defect chemistry of metal oxide heterostructures. Contributions to the nonlinear dielectric and piezoelectric response of ferroelectric thin films and ceramics.

Ferroelectrics , —, doi: Kronmuller, H. Colloques 32 C1 , CC Majumder, S. Effect of acceptor and donor dopants on polarization components of lead zirconate titanate thin films. Clark, G. Effects of radiation-damage in ion-implanted thin films of metal-oxide superconductors. Kalinin, S. Functional ion defects in transition metal oxides. Science , —, doi: Bibes, M. Multiferroics: Towards a magnetoelectric memory.

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Van de Walle, C. Defect analysis and engineering in ZnO. Physica B-Condensed Matter , —, doi: Lin, Y. Enhancing grain boundary ionic conductivity in mixed ionic-electronic conductors. Medvedev, D. Advanced materials for SOFC application: Strategies for the development of highly conductive and stable solid oxide proton electrolytes.

Wee, S. Engineering nanocolumnar defect configurations for optimized vortex pinning in high temperature superconducting nanocomposite wires. Shikama, T. Radiation effects in functional materials for nuclear fusion application.

Models in biology: ‘accurate descriptions of our pathetic thinking’

Glower, D. Effects of radiation-induced damage centers in lead zirconate titanate ceramics. Gao, J. Thin Solid Films , —, doi: Part B 79 , —, doi: Scott, J. Brewer, S. Effect of top electrode material on radiation-induced degradation of ferroelectric thin film structures. Lucchese, M. Quantifying ion-induced defects and Raman relaxation length in graphene. Carbon 48 , —, doi: Imai, H. Intrinsic-defect and extrinsic-defect formation in silica glasses by radiation.

Solids , —, doi: Galeener, F. X-ray creation and activation of electron-spin-resonance in vitreous silica. B 47 , —, doi: Bastani, Y. Proie, R. Total ionizing dose effects in piezoelectric MEMS relays. IEEE Trans. Sci 60 , —, doi: Graham, J. Neutron irradiation effects on domain wall mobility and reversibility in lead zirconate titanate thin films.

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Chang, S. ACS Nano 8 , —, doi: Haugsrud, R. Proton conduction in rare-earth ortho-niobates and ortho-tantalates.